NPN bipolar junction transistor in a TO-92-3 package for through-hole mounting. Features a 40V collector-emitter breakdown voltage and a 50mA continuous collector current. Operates with a gain bandwidth product of 1.1GHz and a minimum hFE of 65. Rated for 350mW maximum power dissipation, with an operating temperature range of -55°C to 150°C. Packaged in an ammo pack, this RoHS compliant component is lead-free.
Onsemi BF240_D74Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 40V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 1.1GHz |
| Gain Bandwidth Product | 1.1GHz |
| hFE Min | 65 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 1.1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 1.1GHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BF240_D74Z to view detailed technical specifications.
No datasheet is available for this part.
