NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 250V collector-emitter breakdown voltage and a 50mA maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 50 and a transition frequency of 60MHz. Packaged in a TO-92-3 case, it operates from -55°C to 150°C and is lead-free and RoHS compliant.
Frequency60MHz
PackageTO-92-3
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi BF422RL1G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 60MHz |
| Gain Bandwidth Product | 60MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 830mW |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BF422RL1G Datasheet
Download the complete datasheet for Onsemi BF422RL1G to view detailed technical specifications.
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