
PNP Bipolar Junction Transistor in a TO-92 package. Features a Collector Emitter Voltage (VCEO) of 250V and a Collector Base Voltage (VCBO) of -250V. Offers a maximum collector current of 500mA and a transition frequency of 60MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 830mW. This RoHS compliant component is supplied in bulk packaging.
Onsemi BF423G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 60MHz |
| Gain Bandwidth Product | 60MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 830mW |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
| DC Rated Voltage | -250V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BF423G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
