PNP Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 250V collector-emitter breakdown voltage and a 250V collector-base voltage. This device offers a maximum collector current of 500mA and a transition frequency of 60MHz. With a minimum hFE of 50 and a maximum power dissipation of 830mW, it operates across a temperature range of -55°C to 150°C. The transistor is RoHS compliant and lead-free, with a TO-92-3 pin configuration and a body height of 5.33mm.
Onsemi BF423ZL1G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 60MHz |
| Gain Bandwidth Product | 60MHz |
| Height | 5.33mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 250V |
| Max Collector Current | 500mA |
| Max Frequency | 60MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Box |
| Polarity | PNP |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
| DC Rated Voltage | -250V |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BF423ZL1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.