PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter voltage (VCEO) of 350V. Operates with a transition frequency of 50MHz and a minimum hFE of 25. Packaged in a TO-92-3 through-hole mount configuration, with a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C.
Frequency50MHz
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi BF493S technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | -2V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -350V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BF493S Datasheet
Download the complete datasheet for Onsemi BF493S to view detailed technical specifications.
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