
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 300V collector-emitter voltage and 0.05A continuous collector current. Offers 1500mW maximum power dissipation and a minimum DC current gain of 50 at 25mA and 20V. Packaged in a 4-pin SOT-223 (TO-261AA) lead-frame SMT with gull-wing leads, measuring 6.5mm x 3.5mm x 1.57mm. Operates across a temperature range of -65°C to 150°C.
Onsemi BF721T1G technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.57 |
| Seated Plane Height (mm) | 1.63 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Package Orientation | Yes |
| Package Orientation Marking Type | Beveled Edge |
| Jedec | TO-261AA |
| Type | PNP |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 300V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 300V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 1500mW |
| Material | Si |
| Minimum DC Current Gain | 50@25mA@20V |
| Maximum Transition Frequency | 60(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi BF721T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.