PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 300V collector-emitter voltage and 0.05A continuous collector current. Offers 1500mW maximum power dissipation and a minimum DC current gain of 50 at 25mA and 20V. Packaged in a 4-pin SOT-223 (TO-261AA) lead-frame SMT with gull-wing leads, measuring 6.5mm x 3.5mm x 1.57mm. Operates across a temperature range of -65°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Onsemi BF721T1G technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
3.5
Package Height (mm)
1.57
Seated Plane Height (mm)
1.63
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Package Orientation
Yes
Package Orientation Marking Type
Beveled Edge
Jedec
TO-261AA
Type
PNP
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
300V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
300V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
1500mW
Material
Si
Minimum DC Current Gain
50@25mA@20V
Maximum Transition Frequency
60(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi BF721T1G Datasheet
Download the complete datasheet for Onsemi BF721T1G to view detailed technical specifications.
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