
N-channel enhancement mode MOSFET for small signal applications. Features a 200V maximum drain-source voltage and 0.25A continuous drain current. Packaged in a 3-pin TO-92 plastic through-hole configuration with a 1.39mm pin pitch. Operates across a wide temperature range from -55°C to 150°C.
Onsemi BS107 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.2(Max) |
| Package Width (mm) | 4.19(Max) |
| Package Height (mm) | 5.33(Max) |
| Seated Plane Height (mm) | 5.33(Max) |
| Pin Pitch (mm) | 1.39(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-226-AA |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.25A |
| Maximum Drain Source Resistance | 14000@10VmOhm |
| Typical Input Capacitance @ Vds | 60@25VpF |
| Maximum Power Dissipation | 350mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| PPAP | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi BS107 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.