Single N-channel JFET with 60V drain-source breakdown voltage and 500mA continuous drain current. Features 5 Ohm maximum drain-source on-resistance and 2V gate-source threshold voltage. Packaged in a TO-92 (TO-226) case with copper, tin, silver contact plating. Operates from -55°C to 150°C with 350mW maximum power dissipation.
PackageTO-92
Current Rating500mA
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Onsemi BS170G technical specifications.
General
| Package/Case | TO-92 |
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 500mA |
| Current Rating | 500mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 4ns |
| Turn-On Delay Time | 4ns |
| DC Rated Voltage | 60V |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BS170G Datasheet
Download the complete datasheet for Onsemi BS170G to view detailed technical specifications.
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