
High voltage PNP bipolar junction transistor in SOT-223-4 package. Features a collector-emitter voltage (VCEO) of 300V and a collector base voltage (VCBO) of -350V. Offers a maximum collector current of 100mA and a transition frequency of 15MHz. Power dissipation is rated at 1.5W, with operating temperatures ranging from -65°C to 150°C. Supplied on a 1000-piece tape and reel.
Onsemi BSP16T1G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | -350V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -2V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 15MHz |
| Gain Bandwidth Product | 15MHz |
| Height | 1.75mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 100mA |
| Max Frequency | 15MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| DC Rated Voltage | -300V |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BSP16T1G to view detailed technical specifications.
No datasheet is available for this part.
