NPN bipolar junction transistor for general-purpose amplification. Features a 40V collector-emitter voltage (VCEO) and 800mA maximum collector current. Operates with a 300MHz transition frequency and a minimum hFE of 100. Packaged in a SOT-23 surface-mount case, supplied on a 3000-piece tape and reel. RoHS compliant with a maximum power dissipation of 350mW.
Frequency300MHz
PackageSOT-23
Current Rating800mA
MountingSurface Mount
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Technical Specifications
Onsemi BSR14 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Current Rating
800mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
0.93mm
hFE Min
100
Lead Free
Lead Free
Length
2.92mm
Max Breakdown Voltage
40V
Max Collector Current
800mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BSR14 Datasheet
Download the complete datasheet for Onsemi BSR14 to view detailed technical specifications.
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