PNP Bipolar Junction Transistor (BJT) for general purpose amplification. Features a -60V Collector Base Voltage (VCBO) and 40V Collector Emitter Voltage (VCEO). Offers a maximum collector current of -800mA and a transition frequency of 200MHz. Packaged in a SOT-23 surface mount case, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 350mW.
Frequency200MHz
PackageSOT-23
Current Rating-800mA
MountingSurface Mount
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Technical Specifications
Onsemi BSR15 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1.6V
Contact Plating
Tin, Matte
Current Rating
-800mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
0.93mm
hFE Min
100
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
40V
Max Collector Current
800mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-40V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BSR15 Datasheet
Download the complete datasheet for Onsemi BSR15 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.