The BSS110 is a P-CHANNEL MOSFET with a drain to source breakdown voltage of 50V and a continuous drain current of 170mA. It has a drain to source resistance of 10R and a power dissipation of 630mW. The device is packaged in a TO-92-3 case and is rated for operation between -55°C and 150°C. It is not RoHS compliant.
PackageTO-92-3
Current Rating-170mA
PolarityP-CHANNEL
Power630mW
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Technical Specifications
Onsemi BSS110 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | -170mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 40pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Polarity | P-CHANNEL |
| Power Dissipation | 630mW |
| Rds On Max | 10R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BSS110 Datasheet
Download the complete datasheet for Onsemi BSS110 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.