The BSS138LT3 is a single N-channel junction field-effect transistor with a drain to source breakdown voltage of 50V and a continuous drain current of 200mA. It has a maximum power dissipation of 225mW and a maximum operating temperature of 150°C. The device is packaged in a SOT-23-3 package and is not RoHS compliant. It has a gate to source voltage of 20V and an input capacitance of 50pF.
PackageSOT-23-3
Current Rating200mA
PolarityN-CHANNEL
Power225mW
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Technical Specifications
Onsemi BSS138LT3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 50V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 225mW |
| Rds On Max | 3.5R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BSS138LT3 Datasheet
Download the complete datasheet for Onsemi BSS138LT3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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