PNP Bipolar Junction Transistor in a SOT-23-3 package. Features 100V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 95MHz transition frequency and offers a minimum hFE of 30. Rated for 150°C maximum operating temperature and supplied on a 3000-piece tape and reel. RoHS compliant and halogen-free.
Frequency95MHz
PackageSOT-23-3
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BSS63LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
110V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
250mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
6V
Frequency
95MHz
Gain Bandwidth Product
95MHz
Halogen Free
Halogen Free
Height
1.11mm
hFE Min
30
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
100V
Max Collector Current
100mA
Max Frequency
95MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
95MHz
DC Rated Voltage
-100V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BSS63LT1G Datasheet
Download the complete datasheet for Onsemi BSS63LT1G to view detailed technical specifications.
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