
NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-23 package. Features a 12V collector-emitter voltage (VCEO) and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 400MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 225mW.
Onsemi BSV52_D87Z technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 400MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 225mW |
| Transition Frequency | 400MHz |
| DC Rated Voltage | 12V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BSV52_D87Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.