The BU508AFTBTU is a high-voltage NPN transistor with a collector-emitter breakdown voltage of 700V and a maximum collector current of 5A. It features a power dissipation of 60W and is packaged in a SC case for through-hole mounting. The transistor operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
PackageSC
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BU508AFTBTU technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 700V |
| Collector Emitter Voltage (VCEO) | 700V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 225 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 60W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 700V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BU508AFTBTU Datasheet
Download the complete datasheet for Onsemi BU508AFTBTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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