The BUH50 is a TO-220-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 500V and a maximum collector current of 4A. It has a maximum power dissipation of 50W and operates over a temperature range of -65°C to 150°C. The transistor is not RoHS compliant and contains lead.
PackageTO-220-3
Current Rating4A
PolarityNPN
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Technical Specifications
Onsemi BUH50 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 7 |
| Lead Free | Contains Lead |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | SWITCHMODE™ |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BUH50 Datasheet
Download the complete datasheet for Onsemi BUH50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.