NPN Bipolar Power Transistor, TO-220-3 package, featuring a 500V Collector Emitter Voltage (VCEO) and a 4A Max Collector Current. This transistor offers a 160V Collector Emitter Breakdown Voltage and a 50W Power Dissipation. With a transition frequency of 4MHz and a minimum hFE of 7, it is suitable for power switching applications. RoHS compliant and lead-free, it operates within a temperature range of -65°C to 150°C.
Frequency4MHz
PackageTO-220-3
Current Rating4A
PolarityNPN
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Technical Specifications
Onsemi BUH50G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 15.75mm |
| hFE Min | 7 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Breakdown Voltage | 500V |
| Max Collector Current | 4A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | SWITCHMODE™ |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 500V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BUH50G Datasheet
Download the complete datasheet for Onsemi BUH50G to view detailed technical specifications.
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