NPN silicon plastic transistor designed for through-hole mounting. Features a 500V collector-emitter breakdown voltage and 800V collector base voltage. Offers a maximum collector current of 3A and a power dissipation of 50W. Operates within a temperature range of -65°C to 150°C, with a transition frequency of 23MHz. Packaged in bulk, with 500 units per box.
Frequency23MHz
PackageTO-126-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi BUH51G technical specifications.
General
| Package/Case | TO-126-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 10V |
| Frequency | 23MHz |
| Gain Bandwidth Product | 23MHz |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| Series | SWITCHMODE™ |
| Transition Frequency | 23MHz |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BUH51G Datasheet
Download the complete datasheet for Onsemi BUH51G to view detailed technical specifications.
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