NPN Silicon Transistor, TO-220-3 package, featuring a 1kV Collector Base Voltage and 450V Collector Emitter Voltage. This bipolar junction transistor offers a 5A Max Collector Current and 100W Power Dissipation. Designed for through-hole mounting, it operates within a -65°C to 150°C temperature range and is RoHS compliant.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BUT11A technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 9V |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BUT11A |
| DC Rated Voltage | 450V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BUT11A Datasheet
Download the complete datasheet for Onsemi BUT11A to view detailed technical specifications.
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