NPN Silicon Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector-emitter voltage (VCEO) of 450V and a collector base voltage (VCBO) of 1kV. Offers a continuous collector current rating of 5A with a maximum power dissipation of 100W. Operates across a temperature range of -65°C to 150°C and is RoHS compliant. Designed for through-hole mounting with tin, matte contact plating.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BUT11ATU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 15.7mm |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 450V |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BUT11ATU Datasheet
Download the complete datasheet for Onsemi BUT11ATU to view detailed technical specifications.
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