NPN Bipolar Junction Transistor (BJT) designed for high voltage applications. Features a 450V Collector-Emitter Breakdown Voltage and a 450V DC Rated Voltage. Offers a maximum collector current of 2A and a transition frequency of 4MHz. Packaged in a TO-220-3 case, this component has a maximum power dissipation of 50W and a minimum hFE of 30.
Frequency4MHz
PackageTO-220-3
Current Rating2A
PolarityNPN
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Technical Specifications
Onsemi BUX85 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| RoHS Compliant | No |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 450V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BUX85 Datasheet
Download the complete datasheet for Onsemi BUX85 to view detailed technical specifications.
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