NPN bipolar junction transistor (BJT) with a 450V collector-emitter breakdown voltage and a maximum collector current of 2A. Features a 4MHz transition frequency and a maximum power dissipation of 50W. Packaged in a TO-220-3 configuration with tin, matte contact plating. Operates across a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency4MHz
PackageTO-220-3
Current Rating2A
PolarityNPN
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Technical Specifications
Onsemi BUX85G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 9.28mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 2A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 450V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BUX85G Datasheet
Download the complete datasheet for Onsemi BUX85G to view detailed technical specifications.
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