Single P-Channel Logic Level Power MOSFET featuring a 10 Ohm drain-to-source resistance and 130mA continuous drain current. This device offers a -50V drain-to-source voltage and operates within a -55°C to 150°C temperature range. Packaged in a SOT-23-3, it boasts a 225mW power dissipation and is supplied on a 3000-piece tape and reel. Key electrical characteristics include a 3.6ns turn-on delay and 12ns turn-off delay, with 36pF input capacitance.
PackageSOT-23-3
PolarityP-CHANNEL
Power225mW
Quick Jump:
Technical Specifications
Onsemi BVSS84LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 130mA |
| Drain to Source Resistance | 10R |
| Element Configuration | Single |
| Fall Time | 1.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 36pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| Rds On Max | 10R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3.6ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BVSS84LT1G Datasheet
Download the complete datasheet for Onsemi BVSS84LT1G to view detailed technical specifications.
No datasheet is available for this part.