PNP Bipolar Junction Transistor (BJT) in SC package, featuring a collector-emitter breakdown voltage of 50V and a maximum collector current of 3A. Offers low collector-emitter saturation voltage of -185mV and a maximum collector-emitter voltage of 500mV. Operates with a gain bandwidth product of 360MHz and a transition frequency of 380MHz. Designed for a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 900mW. Packaged in tape and reel, this RoHS compliant component is lead-free.
Frequency1MHz
PackageSC
PolarityPNP
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Technical Specifications
Onsemi CPH3105-TL-E technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -185mV |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 360MHz |
| Height | 0.9mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 380MHz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi CPH3105-TL-E Datasheet
Download the complete datasheet for Onsemi CPH3105-TL-E to view detailed technical specifications.
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