
PNP Bipolar Junction Transistor (BJT) featuring a maximum collector current of 3A and a collector-emitter voltage (VCEO) of 30V. Offers low collector-emitter saturation voltage of -270mV and a transition frequency of 420MHz. Housed in an SC package with dimensions of 2.9mm (L) x 1.6mm (W) x 0.9mm (H). Rated for operation between -55°C and 150°C, with 900mW power dissipation. Packaged in a 3000-piece tape and reel, this lead-free and RoHS compliant component is designed for high-frequency applications.
Onsemi CPH3122-TL-E technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -270mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 180mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 400MHz |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Collector Current | 3A |
| Max Frequency | 400MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 900mW |
| RoHS Compliant | Yes |
| Transition Frequency | 420MHz |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi CPH3122-TL-E to view detailed technical specifications.
No datasheet is available for this part.
