NPN Bipolar Junction Transistor (BJT) in SOT-23-3 package, featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 5A. Offers low collector-emitter saturation voltage of 150mV. Operates with a transition frequency of 330MHz and a minimum hFE of 200. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Frequency330MHz
PackageSOT-23-3
PolarityNPN
Power900mW
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Technical Specifications
Onsemi CPH3212-TL-E technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
150mV
Collector-emitter Voltage-Max
150mV
Emitter Base Voltage (VEBO)
6V
Frequency
330MHz
Height
0.9mm
hFE Min
200
Lead Free
Lead Free
Length
2.9mm
Max Collector Current
5A
Max Frequency
330MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
900mW
RoHS Compliant
Yes
Transition Frequency
330MHz
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi CPH3212-TL-E Datasheet
Download the complete datasheet for Onsemi CPH3212-TL-E to view detailed technical specifications.
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