CPH3360-TL-H

P-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 1.6A continuous drain current. This single-element silicon transistor is housed in a 3-pin CPH package with gull-wing leads for surface mounting. Key specifications include a maximum drain-source resistance of 303 mOhm at 10V, typical gate charge of 2.2 nC at 10V, and typical input capacitance of 82 pF at 10V. The plastic package measures 2.9mm x 1.6mm x 0.9mm with a 0.95mm pin pitch, operating across a temperature range of -55°C to 150°C.