N-Channel Dual Junction Field-Effect Transistor (JFET) for small signal applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 150mA. Offers a low on-resistance of 3.7 Ohms. Packaged in an SMD/SMT format with tin matte plating, this component operates within a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel.
PackageSMD/SMT
PolarityN-CHANNEL
Power250mW
Quick Jump:
Technical Specifications
Onsemi CPH5617-TL-E technical specifications.
General
| Package/Case | SMD/SMT |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 150mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.7R |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 120ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.9mm |
| Input Capacitance | 7pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Rds On Max | 3.7R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 19ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi CPH5617-TL-E Datasheet
Download the complete datasheet for Onsemi CPH5617-TL-E to view detailed technical specifications.
No datasheet is available for this part.
Product Images
