N-channel enhancement mode power MOSFET with a 30V drain-source voltage and 3.5A continuous drain current. Features a 5-pin CPH package, measuring 2.9mm x 1.6mm x 0.9mm, designed for surface mounting. Offers a low drain-source on-resistance of 52mOhm at 4.5V gate-source voltage. Typical input capacitance is 430pF at 10V drain-source voltage, with a gate charge of 4.7nC at 4.5V gate-source voltage. Maximum power dissipation is 900mW, operating across a temperature range of -55°C to 150°C.
PackageCPH
MountingSurface Mount
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Technical Specifications
Onsemi CPH5871-TL-H technical specifications.
General
Package Family Name
SOT
Package/Case
CPH
Pin Count
5
PCB
5
Package Length (mm)
2.9
Package Width (mm)
1.6
Package Height (mm)
0.9
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
3.5A
Material
Si
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
430@10VpF
Maximum Power Dissipation
900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi CPH5871-TL-H Datasheet
Download the complete datasheet for Onsemi CPH5871-TL-H to view detailed technical specifications.
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