N-channel enhancement mode power MOSFET with a 30V drain-source voltage and 3.5A continuous drain current. Features a 5-pin CPH package, measuring 2.9mm x 1.6mm x 0.9mm, designed for surface mounting. Offers a low drain-source on-resistance of 52mOhm at 4.5V gate-source voltage. Typical input capacitance is 430pF at 10V drain-source voltage, with a gate charge of 4.7nC at 4.5V gate-source voltage. Maximum power dissipation is 900mW, operating across a temperature range of -55°C to 150°C.
Onsemi CPH5871-TL-H technical specifications.
| Package Family Name | SOT |
| Package/Case | CPH |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 3.5A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 430@10VpF |
| Maximum Power Dissipation | 900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi CPH5871-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.