Single P-Channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 4A. This MOSFET offers a low on-resistance of 100mΩ. Designed for efficient switching, it exhibits a turn-on delay time of 5.8ns and a fall time of 40ns. The component is housed in a compact SOT-23-6 package, measuring 2.9mm in length, 1.6mm in width, and 0.9mm in height. It operates within a temperature range of -55°C to 150°C and is RoHS and Halogen Free compliant.
PackageSOT-23-6
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi CPH6354-TL-H technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
0.9mm
Input Capacitance
600pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
Yes
Turn-Off Delay Time
78ns
Turn-On Delay Time
5.8ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi CPH6354-TL-H Datasheet
Download the complete datasheet for Onsemi CPH6354-TL-H to view detailed technical specifications.
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