Single N-Channel Power MOSFET featuring a 60V Drain-Source Voltage (Vdss) and 6A Continuous Drain Current (ID). Offers a low 43mΩ Drain-Source On-Resistance (Rds On Max). Housed in a compact SOT-23-6 package, this component boasts fast switching speeds with a 12ns turn-on delay and 35ns fall time. Designed for efficient operation with a maximum power dissipation of 1.6W and a wide operating temperature range from -55°C to 150°C. Packaged on a 3000-piece tape and reel, it is lead-free and RoHS compliant.
PackageSOT-23-6
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi CPH6442-TL-E technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
6A
Drain to Source Resistance
43mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
43MR
Element Configuration
Single
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Height
0.9mm
Input Capacitance
1.04nF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Rds On Max
43mR
RoHS Compliant
Yes
Turn-Off Delay Time
80ns
Turn-On Delay Time
12ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi CPH6442-TL-E Datasheet
Download the complete datasheet for Onsemi CPH6442-TL-E to view detailed technical specifications.
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