NPN dual bipolar junction transistor in SOT-23-6 package. Features 30V collector-emitter breakdown voltage, 1.5A max collector current, and low 225mV collector-emitter saturation voltage. Operates with a 500MHz transition frequency and 1.2W max power dissipation. Suitable for a wide temperature range from -55°C to 150°C, supplied on a 3000-piece tape and reel.
Frequency500MHz
PackageSOT-23-6
PolarityNPN
Power1.2W
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Technical Specifications
Onsemi CPH6501-TL-E technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 225mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 225mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 500MHz |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Collector Current | 1.5A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| RoHS Compliant | Yes |
| Transition Frequency | 500MHz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi CPH6501-TL-E Datasheet
Download the complete datasheet for Onsemi CPH6501-TL-E to view detailed technical specifications.
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