
PNP Power Bipolar Junction Transistor (BJT) with a maximum collector current of 15A and a collector-emitter voltage of 80V. Features a 50MHz transition frequency and a minimum hFE of 35. Housed in a TO-220-3 package with tin, matte contact plating. Rated for 83W maximum power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
Onsemi D45VH10G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 0.62inch |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 0.404inch |
| Max Collector Current | 15A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| Width | 0.19inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi D45VH10G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
