The DTA115TM3T5G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a halogen-free and RoHS compliant SOT-723-3 package. The transistor has a maximum power dissipation of 260mW and operates over a temperature range of -55°C to 150°C. It is suitable for use in a variety of applications where a PNP transistor is required.
PackageSOT-723-3
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi DTA115TM3T5G technical specifications.
General
| Package/Case | SOT-723-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Halogen Free | Halogen Free |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi DTA115TM3T5G Datasheet
Download the complete datasheet for Onsemi DTA115TM3T5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.