NPN Bipolar Digital Transistor (BRT) in a compact SOT-416 package. Features a 50V Collector Emitter Breakdown Voltage and 100mA Continuous Collector Current. Offers a low 250mV Collector Emitter Saturation Voltage and a minimum hFE of 80. Operates across a wide temperature range from -55°C to 150°C with 200mW power dissipation. This RoHS and Halogen Free component is supplied on a 3000-piece tape and reel.
PackageSOT-416
Current Rating100mA
PolarityNPN
Power200mW
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Technical Specifications
Onsemi DTC115EET1G technical specifications.
General
| Package/Case | SOT-416 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi DTC115EET1G Datasheet
Download the complete datasheet for Onsemi DTC115EET1G to view detailed technical specifications.
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