PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter voltage and 12A continuous collector current. Offers a maximum power dissipation of 1600mW and a transition frequency of 140MHz (typ). Housed in an 8-pin ECH package with a 0.65mm pin pitch, measuring 2.9mm x 2.3mm x 0.93mm. Operating temperature range from -55°C to 150°C.
PackageECH
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi ECH8102-TL-H technical specifications.
General
Package Family Name
ECH
Package/Case
ECH
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.3
Package Height (mm)
0.93(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single Quad Collector Triple Emitter
Number of Elements per Chip
1
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
30V
Maximum DC Collector Current
12A
Maximum Power Dissipation
1600mW
Material
Si
Minimum DC Current Gain
200@500mA@2V|150@4A@2V|100@10A@2V
Maximum Transition Frequency
140(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi ECH8102-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8102-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.