NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a single quad collector triple emitter configuration within an 8-pin ECH package. Delivers a maximum collector-emitter voltage of 50V and a continuous collector current of 10A, with a maximum power dissipation of 1600mW. Offers a minimum DC current gain of 200 at 500mA, 160 at 4A, and 110 at 10A, all at 2V. Operates across a temperature range of -55°C to 150°C.
PackageECH
MountingSurface Mount
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Technical Specifications
Onsemi ECH8201 technical specifications.
General
Package Family Name
ECH
Package/Case
ECH
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.3
Package Height (mm)
0.93(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single Quad Collector Triple Emitter
Number of Elements per Chip
1
Maximum Collector Base Voltage
100V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
10A
Maximum Power Dissipation
1600mW
Material
Si
Minimum DC Current Gain
200@500mA@2V|160@4A@2V|110@10A@2V
Maximum Transition Frequency
230(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Onsemi ECH8201 Datasheet
Download the complete datasheet for Onsemi ECH8201 to view detailed technical specifications.
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