
N-Channel Power MOSFET featuring 30V drain-source voltage and 12A continuous drain current. Achieves low 10mΩ drain-to-source resistance. Operates with a 20V gate-source voltage and offers fast switching with a 17ns turn-on delay and 72ns fall time. Packaged in a compact SOT-28FL / ECH8 (2.9mm x 2.3mm x 0.9mm) with 3000 units per tape and reel. This RoHS and Halogen Free component is designed for efficient power management.
Onsemi ECH8410-TL-H technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 17ns |
| Width | 2.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi ECH8410-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
