The ECH8619-TL-E is a surface mount N and P-Channel MOSFET with a maximum drain to source voltage of 60V and continuous drain current of 2A. It has a maximum power dissipation of 1.5W and an input capacitance of 560pF. This device is packaged in a single unit on a cut tape with a package quantity of one. The ECH8619-TL-E is suitable for use in a variety of applications where a high-performance MOSFET is required.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Onsemi ECH8619-TL-E technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | N and P-Channel |
| Input Capacitance | 560pF |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 93mR |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi ECH8619-TL-E Datasheet
Download the complete datasheet for Onsemi ECH8619-TL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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