Dual N-Channel Power MOSFET, 24V Vds, 10A ID, 14mΩ Rds On. Features 2 N-Channel FETs in a compact SOT-28FL / ECH8 package, ideal for surface-mount applications. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. This RoHS compliant component offers fast switching characteristics with turn-on delay time of 300ns and fall time of 2500ns.
PackageSMD/SMT
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Onsemi ECH8651R-TL-H technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
24V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
24V
Element Configuration
Dual
Fall Time
2500ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Halogen Free
Halogen Free
Height
0.9mm
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
14mR
RoHS Compliant
Yes
Turn-Off Delay Time
4000ns
Turn-On Delay Time
300ns
Width
2.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi ECH8651R-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8651R-TL-H to view detailed technical specifications.
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