Dual N-Channel Power MOSFET, 24V Vds, 10A ID, 14mΩ Rds On. Features 2 N-Channel FETs in a compact SOT-28FL / ECH8 package, ideal for surface-mount applications. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. This RoHS compliant component offers fast switching characteristics with turn-on delay time of 300ns and fall time of 2500ns.
PackageSMD/SMT
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Onsemi ECH8651R-TL-H technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 24V |
| Element Configuration | Dual |
| Fall Time | 2500ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 4000ns |
| Turn-On Delay Time | 300ns |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi ECH8651R-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8651R-TL-H to view detailed technical specifications.
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