ECH8653-TL-H

N-Channel Power MOSFET featuring 20V drain-source breakdown voltage and 7.5A continuous drain current. Offers a low 20mΩ drain-source resistance at a 10V gate-source voltage. This dual MOSFET configuration is housed in an SMD/SMT SOT-28FL / ECH8 package, supplied on a 3000-piece tape and reel. Key performance characteristics include a 1.5W power dissipation, 1.28nF input capacitance, and switching times of 13ns turn-on delay and 36ns fall time. The component is RoHS compliant and halogen-free, operating within a -55°C to 150°C temperature range.