
Complementary Dual Power MOSFET featuring N and P-channel FETs, rated for 20V drain-to-source voltage. Offers a continuous drain current of 5A and a low drain-to-source resistance of 38mR (38 milliohms). Packaged in a compact SOT-28FL / ECH8 SMD/SMT package with dimensions of 2.9mm (L) x 2.3mm (W) x 0.9mm (H). This RoHS and Halogen Free component operates from -55°C to 150°C, with a maximum power dissipation of 1.5W.
Onsemi ECH8668-TL-H technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| Input Capacitance | 1.06nF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 17.5ns |
| Width | 2.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi ECH8668-TL-H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
