Complementary Dual Power MOSFET featuring N and P-channel FETs, rated for 20V drain-to-source voltage. Offers a continuous drain current of 5A and a low drain-to-source resistance of 38mR (38 milliohms). Packaged in a compact SOT-28FL / ECH8 SMD/SMT package with dimensions of 2.9mm (L) x 2.3mm (W) x 0.9mm (H). This RoHS and Halogen Free component operates from -55°C to 150°C, with a maximum power dissipation of 1.5W.
PackageSMD/SMT
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Onsemi ECH8668-TL-H technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
5A
Drain to Source Resistance
38mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Dual
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
10V
Halogen Free
Halogen Free
Height
0.9mm
Input Capacitance
1.06nF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
17mR
RoHS Compliant
Yes
Turn-Off Delay Time
68ns
Turn-On Delay Time
17.5ns
Width
2.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi ECH8668-TL-H Datasheet
Download the complete datasheet for Onsemi ECH8668-TL-H to view detailed technical specifications.
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