The EMG2DXV5T1G is a NPN transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a power dissipation of 230mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-553-5 case and is lead-free and RoHS compliant.
PackageSOT-553-5
Current Rating100mA
PolarityNPN
Power230mW
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Technical Specifications
Onsemi EMG2DXV5T1G technical specifications.
General
| Package/Case | SOT-553-5 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 230mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi EMG2DXV5T1G Datasheet
Download the complete datasheet for Onsemi EMG2DXV5T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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