P-Channel Power MOSFET for surface mount applications. Features 20V drain-source breakdown voltage and 3A continuous drain current. Offers 85mΩ drain-source resistance at 10V gate-source voltage. Includes integrated Schottky diode and operates within a -55°C to 150°C temperature range. Packaged in a compact SOT-383FL (EMH8) for tape and reel deployment.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Onsemi EMH2801-TL-H technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 7.1ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi EMH2801-TL-H Datasheet
Download the complete datasheet for Onsemi EMH2801-TL-H to view detailed technical specifications.
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