Dual PNP Bipolar Junction Transistor (BJT) in a SOT-563-6 package, offering a collector-emitter voltage (VCEO) of 60V and a maximum collector current of 100mA. Features a transition frequency of 140MHz, a minimum hFE of 120, and a power dissipation of 500mW. Operates across a temperature range of -55°C to 150°C. Packaged on a 4000-piece tape and reel, this component is lead-free and RoHS compliant.
Frequency140MHz
PackageSOT-563-6
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi EMT1DXV6T1G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 140MHz |
| Gain Bandwidth Product | 140MHz |
| Height | 0.6mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 100mA |
| Max Frequency | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | -60V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi EMT1DXV6T1G Datasheet
Download the complete datasheet for Onsemi EMT1DXV6T1G to view detailed technical specifications.
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