The EMT1DXV6T5 is a PNP transistor with a collector-emitter breakdown voltage of 60V and a collector-emitter saturation voltage of 500mV. It has a maximum collector current rating of 100mA and a maximum power dissipation of 500mW. The transistor is packaged in a SOT-563-6 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSOT-563-6
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi EMT1DXV6T5 technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 140MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi EMT1DXV6T5 Datasheet
Download the complete datasheet for Onsemi EMT1DXV6T5 to view detailed technical specifications.
No datasheet is available for this part.