The EMX1DXV6T1 is a lead-free NPN bipolar junction transistor with a maximum collector current rating of 100mA and a maximum operating temperature of 150°C. It has a gain bandwidth product of 180MHz and a collector-emitter breakdown voltage of 50V. The transistor is packaged in a 6-pin SOT-563-6 case and is available in tape and reel packaging. It is RoHS compliant and suitable for use in a variety of applications.
PackageSOT-563-6
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi EMX1DXV6T1 technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi EMX1DXV6T1 Datasheet
Download the complete datasheet for Onsemi EMX1DXV6T1 to view detailed technical specifications.
No datasheet is available for this part.