EMX1DXV6T1G

Dual NPN BJT, 50V, 100mA, 180MHz, SOT-563

Dual NPN Bipolar Transistor in a compact SOT-563-6 package, offering a 50V collector-emitter breakdown voltage and a 100mA maximum collector current. Features a 400mV collector-emitter saturation voltage and a minimum hFE of 120, with a transition frequency of 180MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 500mW. This RoHS compliant component is supplied on a 4000-piece tape and reel.

Frequency180MHz

PackageSOT-563-6

Current Rating100mA

PolarityNPN

Quick Jump:

Technical Specifications

Onsemi EMX1DXV6T1G technical specifications.

General

Package/Case	SOT-563-6
Collector Base Voltage (VCBO)	60V
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	400mV
Collector-emitter Voltage-Max	400mV
Current Rating	100mA
Emitter Base Voltage (VEBO)	7V
Gain Bandwidth Product	180MHz
Height	0.6mm
hFE Min	120
Lead Free	Lead Free
Length	1.7mm
Max Breakdown Voltage	50V
Max Collector Current	100mA
Max Frequency	180MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500mW
Package Quantity	4000
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	180MHz
DC Rated Voltage	50V
Width	1.3mm