The EMX1DXV6T5G is a NPN transistor with a collector base voltage of 60V and a collector emitter breakdown voltage of 50V. It has a current rating of 100mA and a maximum power dissipation of 500mW. The transistor operates within a temperature range of -55°C to 150°C and is packaged in a SOT-563-6 case. It is lead free and RoHS compliant.
PackageSOT-563-6
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi EMX1DXV6T5G technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi EMX1DXV6T5G Datasheet
Download the complete datasheet for Onsemi EMX1DXV6T5G to view detailed technical specifications.
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